Silicon N-Channel Power MOSFET R General Description： CS55N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. 1pc, 2pcs, 3pcs, or 5pcs. Warranty does not cover You can choose. All MOSFET voltages are referenced to the source terminal. An N-Channel device, like an NPN transistor, has a drain voltage that is positive with respect to the source. Being enhancement-mode devices, they will be turned on by a positive voltage on the gate. The opposite is true for P-Channel devices, that are similar to PNP transistors. The OptiMOS™ automotive MOSFETs offer you a high quality that is achieved with robustness, enhanced testing and qualification of each product. Automotive MOSFETs are available in n-channel and p-channel polarity with a wide voltage range from 20 V up to 800 V and diversified packages. P-Channel MOSFET is available in a range from 30 V up to 40 V. FQA55N10, datasheet for FQA55N10 - 100V N-Channel MOSFET provided by Fairchild Semiconductor. FQA55N10 pdf documentation and FQA55N10 application notes, selection guide.
55n10 Mosfet Equivalent
Inchange Semiconductor N-Channel MOSFET Transistor
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55n10 Mosfet Datasheet
Inchange Semiconductor N-Channel MOSFET Transistor
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